Role of deep-level centers in compensated semi-insulating GaAs

被引：1
|
作者：
Katsoev V.V. [1 ]
Katsoev L.V. [1 ]
Il'ichev E.A. [1 ]
机构：
[1] Moscow Institute of Electronic Technology (Technical University), Moscow
来源：
Russian Microelectronics | 2008年 / 37卷 / 5期
关键词：
73.61.Ey;
D O I：
10.1134/S1063739708050028
中图分类号：
学科分类号：
摘要：
Requirements are defined for GaAs materials intended for solid-state detectors of ionizing radiation. A model is proposed to ascertain the role of deep-level centers in compensated semi-insulating GaAs. The model consists of transport equations and a charge-balance equation describing carrier transitions in a multi-level system. Its numerical analysis is performed to ascertain the relationship to be satisfied by dopant concentrations. © 2008 MAIK Nauka.
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页码：296 / 301
页数：5
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