High resolution PITS studies of deep-level defects in semi-insulating GaAs and InP

被引：2
|
作者：
Kaminski, P
Pawlowski, M
Kozlowski, R
Cwirko, R
Palczewska, M
机构：
来源：
SOLID STATE CRYSTALS: GROWTH AND CHARACTERIZATION | 1997年 / 3178卷
关键词：
deep levels; semi-insulating; PITS; GaAs; InP;
D O I：
10.1117/12.280743
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Deep states in semi-insulating GaAs and InP are investigeted by high resolution Photo-induced Transient Spectroscopy (PITS). The results exemplify new potentialities of the improved PITS technique.
引用
收藏
页码：246 / 250
页数：5
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