CuInS/ZnS quantum dots-sensitized solar cells by introducing ZnS passivation layer

Quantum dots (QDs) sensitized solar cells (QDSSCs) are among the promising choices of the third-generation technology to overcome the depletion of fossil fuel and energy demand. This study is dedicated to formulate CuInS/ZnS QDs as a light harvesting material for QDSSCs and to improve its efficiency. The sensitization time effect was studied, and the efficiency was improved by introducing ZnS as a passivation layer at optimum sensitization time using successive ionic layer absorption and reaction SILAR technique. The characterization of the synthesized QDs was achieved using UV–visible spectroscopy, photoluminescence, energy dispersive X-ray (EDX), X-ray diffraction (XRD), transmission electron microscope (TEM) and scanning electron microscope (SEM). Current density–voltage measurements of the fabricated QDSSCs were measured in the potential range of − 0.5 to 1.2 V. The optimal performance of the formulated QDSSCs with 5 days of sensitization time and 13 cycle of ZnS passivation layer had short-current density (Jsc), open circuit voltage (Voc), fill factor (FF) and efficiency of 29.57 mA/cm2, 0.54 V, 0.27 and 4.42%, respectively.