Random Telegraph Noise in 30 nm FETs with Conventional and High-κ Dielectrics

被引：0

作者：

Angelica Lee

Andrew R. Brown

Asen Asenov

Scott Roy

机构：

[1] University of Glasgow,Device Modelling Group, Department of Electronics & Electrical Engineering

来源：

Journal of Computational Electronics | 2004年 / 3卷

关键词：

random telegraph noise; MOSFET; high-κ; carrier trapping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The magnitude of fractional current variation in ultra-small (30 nm channel length) MOSFETs due to single charge trapping-detrapping events at any position within the gate dielectric is studied using numerical simulation. These random telegraph signals in the drain current indicate the amplitude of low frequency MOSFET noise. Simulations are performed for realistic devices with poly-silicon gates subject to poly-silicon depletion, and for both SiO2 and HfO2 as dielectric materials.

引用

页码：247 / 250

页数：3

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