Using atomic-step-structured 6H-SiC(0001) surfaces for the calibration of nanotranslations in scanning probe microscopy

被引：0
|
作者：
M. S. Dunaevskii
I. V. Makarenko
V. N. Petrov
A. A. Lebedev
S. P. Lebedev
A. N. Titkov
机构：
[1] Russian Academy of Sciences,Ioffe Physico
来源：
Technical Physics Letters | 2009年 / 35卷
关键词：
68.55.J; 68.37.Ps;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The silicon surfaces of 6H-SiC(0001) single crystals subjected to stepwise high-temperature annealing in vacuum have been studied by atomic force microscopy and scanning tunneling microscopy techniques. A special annealing procedure is proposed that yields a structured surface featuring regular atomicsmooth steps with heights of 0.75 and 1.5 nm. We propose using these structured crystal surfaces for calibrating vertical translations in scanning probe microscopes.
引用
收藏
页码：47 / 49
页数：2
相关论文
共 50 条
  • [1] Using atomic-step-structured 6H-SiC(0001) surfaces for the calibration of nanotranslations in scanning probe microscopy
    Dunaevskii, M. S.
    Makarenko, I. V.
    Petrov, V. N.
    Lebedev, A. A.
    Lebedev, S. P.
    Titkov, A. N.
    [J]. TECHNICAL PHYSICS LETTERS, 2009, 35 (01) : 47 - 49
  • [2] Atomic structures of 6H-SiC(0001) and (0001) surfaces
    Li, L
    Tsong, IST
    [J]. SURFACE SCIENCE, 1996, 351 (1-3) : 141 - 148
  • [3] Step bunching of vicinal 6H-SiC{0001} surfaces
    Borovikov, Valery
    Zangwill, Andrew
    [J]. PHYSICAL REVIEW B, 2009, 79 (24)
  • [4] Morphology, atomic and electronic structure of 6H-SiC(0001) surfaces
    Martensson, P
    Owman, F
    Johansson, LI
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 202 (01): : 501 - 528
  • [5] Morphology, Atomic and Electronic Structure of 6H-SiC(0001) Surfaces
    Martensson, P.
    Owman, F.
    Johansson, L. I.
    [J]. Physica Status Solidi (B): Basic Research, 202 (01):
  • [6] Step formation on hydrogen-etched 6H-SiC{0001} surfaces
    Nie, S.
    Lee, C. D.
    Feenstra, R. M.
    Ke, Y.
    Devaty, R. P.
    Choyke, W. J.
    Inoki, C. K.
    Kuan, T. S.
    Gu, Gong
    [J]. SURFACE SCIENCE, 2008, 602 (17) : 2936 - 2942
  • [7] Atomic-Scale Investigation of Epitaxial Graphene Grown on 6H-SiC(0001) Using Scanning Tunneling Microscopy and Spectroscopy
    Choi, Junghun
    Lee, Hangil
    Kim, Sehun
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (31): : 13344 - 13348
  • [8] Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy
    Tanaka, S
    Kern, RS
    Davis, RF
    Wendelken, JF
    Xu, J
    [J]. SURFACE SCIENCE, 1996, 350 (1-3) : 247 - 253
  • [9] Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces: A scanning tunneling microscopy study
    Hupalo, M.
    Conrad, E. H.
    Tringides, M. C.
    [J]. PHYSICAL REVIEW B, 2009, 80 (04):
  • [10] Atomic structure of the 6H-SiC(0001) nanomesh
    Chen, W
    Xu, H
    Liu, L
    Gao, XY
    Qi, DC
    Peng, GW
    Tan, SC
    Feng, YP
    Loh, KP
    Wee, ATS
    [J]. SURFACE SCIENCE, 2005, 596 (1-3) : 176 - 186
12345