Ternary Cr–Ga–Si system at 870 K

Using the results of X-ray phase, structural, and also metallographic analysis, we have constructed the isothermal section of constitution diagram of the Cr–Ga–Si ternary system at 870 K over the entire concentration range. Ternary compounds are not formed at the temperature of investigations. We have established the existence and determined precisely the homogeneity range of Cr3Si1–xGax ( x = 0–0.357) substitution solid solution by the results of refinement of crystallographic parameters according to the Rietveld method [structural type Cr3Si , Pearson symbol cP8 , space group Pm\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ \bar{3} $$\end{document}n , a = 4.556–4.5844(7) Å, RB = 0.0353, Rp = 0.009, Rwp = 0.014, χ2 = 3.68] and metallographic analysis.