Electron and hole injection in metal-oxide-nitride-oxide-silicon structures

被引：0
|
作者：
K. A. Nasyrov
S. S. Shaĭmeev
V. A. Gritsenko
J. H. Han
C. W. Kim
J. -W. Lee
机构：
[1] Russian Academy of Sciences,Institute of Automatics and Electrometry, Siberian Division
[2] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
[3] Samsung Advanced Institute of Technology,undefined
来源：
Journal of Experimental and Theoretical Physics | 2006年 / 102卷
关键词：
73.61.Ng; 73.50.Fg; 61.43.-j; 71.23.An;
D O I：
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学科分类号：
摘要：
The kinetics of electron and hole accumulation in metal-oxide-nitride-oxide-semiconductor structures is studied. Experimental data are compared with a theoretical model that takes into account tunnel injection, electron and hole capture by traps in amorphous silicon nitride SiNx, and trap ionization. Agreement between experimental and calculated data is obtained for the bandgap width Eg = 8.0 eV of amorphous SiO2, which corresponds to the barrier for holes Φh = 3.8 eV at the Si/SiO2 interface. The tunneling effective masses for holes in SiO2 and SiNx are estimated at mh* ≈ (0.4–0.5)m0. The parameters of electron and hole traps in SiNx are determined within the phonon-coupled trap model: the optical energy Wopt = 2.6 eV and the thermal energy WT = 1.3 eV.
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页码：810 / 820
页数：10
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