Electron and hole injection in metal-oxide-nitride-oxide-silicon structures

被引：0
|
作者：
K. A. Nasyrov
S. S. Shaĭmeev
V. A. Gritsenko
J. H. Han
C. W. Kim
J. -W. Lee
机构：
[1] Russian Academy of Sciences,Institute of Automatics and Electrometry, Siberian Division
[2] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
[3] Samsung Advanced Institute of Technology,undefined
来源：
Journal of Experimental and Theoretical Physics | 2006年 / 102卷
关键词：
73.61.Ng; 73.50.Fg; 61.43.-j; 71.23.An;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The kinetics of electron and hole accumulation in metal-oxide-nitride-oxide-semiconductor structures is studied. Experimental data are compared with a theoretical model that takes into account tunnel injection, electron and hole capture by traps in amorphous silicon nitride SiNx, and trap ionization. Agreement between experimental and calculated data is obtained for the bandgap width Eg = 8.0 eV of amorphous SiO2, which corresponds to the barrier for holes Φh = 3.8 eV at the Si/SiO2 interface. The tunneling effective masses for holes in SiO2 and SiNx are estimated at mh* ≈ (0.4–0.5)m0. The parameters of electron and hole traps in SiNx are determined within the phonon-coupled trap model: the optical energy Wopt = 2.6 eV and the thermal energy WT = 1.3 eV.
引用
收藏
页码：810 / 820
页数：10
相关论文
共 50 条
  • [1] Electron and hole injection in metal-oxide-nitride-oxide-silicon structures
    Nasyrov, K. A.
    Shaimeev, S. S.
    Gritsenko, V. A.
    Han, J. H.
    Kim, C. W.
    Lee, J. -W.
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2006, 102 (05) : 810 - 820
  • [2] Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures
    Ishida, Takeshi
    Mine, Toshiyuki
    Hisamoto, Digh
    Shimamoto, Yasuhiro
    Yamada, Ren-ichi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (02) : 863 - 869
  • [3] HOLE AND ELECTRON CURRENT TRANSPORT IN METAL-OXIDE NITRIDE-OXIDE SILICON MEMORY STRUCTURES
    SUZUKI, E
    MIURA, K
    HAYASI, Y
    TSAY, RP
    SCHRODER, DK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) : 1145 - 1149
  • [4] Improved performances of metal-oxide-nitride-oxide-silicon memory with HfTiON as charge-trapping layer
    Chen, J. X.
    Xu, J. P.
    Liu, L.
    Lai, P. T.
    APPLIED PHYSICS LETTERS, 2013, 103 (21)
  • [5] Decrease in Interference Effects between Cells for Metal-Oxide-Nitride-Oxide-Silicon NAND Flash Memory Devices with Metal Spacer Layers
    Kim, Sung Ho
    You, Joo Hyung
    Kim, Tae Whan
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (07)
  • [6] Interface states in cycled hot electron injection program/hot hole erase silicon-oxide-nitride-oxide-silicon memories
    Daniel, R
    Shaham-Diamand, Y
    Roizin, Y
    APPLIED PHYSICS LETTERS, 2004, 85 (25) : 6266 - 6268
  • [7] Phonon-coupled trap-assisted charge injection in metal-nitride-oxidesilicon/silicon-oxide-nitride-oxide-silicon structures
    Nasyrov, K. A.
    Shaimeev, S. S.
    Gritsenko, V. A.
    Han, J. H.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
  • [8] Dynamics of the Charge Centroid in Metal-Oxide-Nitride-Oxide-Silicon Memory Cells during Avalanche Injection and Fowler-Nordheim Injection Based on Incremental-Step-Pulse Programming
    Fujiki, Jun
    Haimoto, Takashi
    Yasuda, Naoki
    Koyama, Masato
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
  • [9] Excess silicon at the silicon nitride/thermal oxide interface in oxide-nitride-oxide structures
    Gritsenko, VA
    Wong, H
    Xu, JB
    Kwok, RM
    Petrenko, IP
    Zaitsev, BA
    Morokov, YN
    Novikov, YN
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) : 3234 - 3240
  • [10] Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide-nitride-oxide-silicon memory
    Liu, L.
    Xu, J. P.
    Chen, J. X.
    Ji, F.
    Huang, X. D.
    Lai, P. T.
    THIN SOLID FILMS, 2012, 524 : 263 - 267
12345