Semiconductor formers of high-voltage pulses of nanosecond duration

被引：0
|
作者：
Yu. V. Aristov
V. B. Voronkov
I. V. Grekhov
A. L. Zhmodikov
A. K. Kozlov
S. V. Korotkov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Instruments and Experimental Techniques | 2007年 / 50卷
关键词：
84.30.Jc; 84.70.+p; 85.30.-z; 85.30.De;
D O I：
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中图分类号：
学科分类号：
摘要：
A small former of high-voltage pulses of nanosecond duration based on new semiconductor devices—deep-level dynistors (DLDs)—is described. The former has been developed on the basis of the Marx voltage-multiplication principle and allows formation of 8-kV voltage pulses across an 8-Ω load at a 2.5-kV input-voltage level. A DLD-based former with an output diode opening switch based on assemblies of drift step-recovery diodes connected in series is described. The results of its being tested are presented. Voltage pulses with an amplitude of 25 kV and a rise time of 1 ns are obtained across a 100-Ω load.
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页码：350 / 352
页数：2
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