Impactful Study of F-shaped Tunnel FET

In this proposed work, a novel single gate F-shaped channel tunnel field effect transistor (SG-FC-TFET) is proposed and investigated. The impact of thickness of the source region and lateral tunneling length between the gate oxide and edge of the source region on analog and radio frequency parameters are investigated with appropriate source and drain lateral length through the 2D-TCAD tool. The slender shape of the source enhanced the electric field crowding effect at the corners of the source region which reflect in terms of high ON-current (Ion). The Ion of the proposed device is increased up to 10− 4A/μm with reduced sub-threshold swing (SS) is 7.3 mV/decade and minimum turn-ON voltage (Von = 0.28 V). The analog/RF parameters of SG-FC-TFET are optimized.