共 50 条
- [21] Energy Bandgap of Cd1−xZnxTe, Cd1−xZnxSe and Cd1−xZnxS Semiconductors: A First-Principles Analysis Based on Tran–Blaha–Modified Becke–Johnson Exchange Potential Journal of Electronic Materials, 2023, 52 : 4191 - 4201
- [22] Cd1 - xZnxTe crystals for gamma detectors: Evaluation of quality from photoconductivity measurements Inorganic Materials, 2005, 41 : 229 - 231
- [23] Characterization of Cd1−xZnxTe crystals grown from a modified vertical bridgman technique Journal of Electronic Materials, 2006, 35 : 1267 - 1274
- [24] Erratum to: Modelling of a Cd1−xZnxTe/ZnTe Single Quantum Well for Laser Diodes Journal of Electronic Materials, 2017, 46 : 6736 - 6736
- [25] Relaxation features of the dielectric response of Cd1−xZnxTe crystals grown from the melt Semiconductors, 2001, 35 : 391 - 393
- [26] Positron-defect profiling in Cd1−xZnxTe wafers after saw cutting Journal of Electronic Materials, 2003, 32 : 583 - 585
- [27] Structure and optical properties of polycrystalline Cd1−xZnxTe thin films prepared by simultaneous evaporation Journal of Materials Science: Materials in Electronics, 2002, 13 : 503 - 506
- [28] Dependence of the properties of Cd1−xZnxTe crystals on the type of intrinsic point defect formed by oxygen Semiconductors, 1999, 33 : 531 - 535
- [29] A modified vertical Bridgman method for growth of high-quality Cd1−xZnxTe crystals Journal of Electronic Materials, 2005, 34 : 1215 - 1224
- [30] Absorption of infrared radiation by free charge carriers in n-type Cd1−xZnxTe Semiconductors, 1999, 33 : 514 - 517