A Scanning Probe Microscopy Study of Cd1−xZnxTe

被引:0
|
作者
C. K. Egan
P. Dabrowski
Z. Klusek
A. W. Brinkman
机构
[1] Durham University,Department of Physics
[2] University of Lodz,Division of Physics and Technology of Nanometer Structures, Department of Solid State Physics
来源
关键词
Cd; Zn; Te; surface; STM; STS; CITS;
D O I
暂无
中图分类号
学科分类号
摘要
The effects of several ex vacuo methods used in the surface preparation of Cd1−xZnxTe (CZT) have been studied using noncontact atomic force microscopy, scanning tunneling microscopy, and scanning tunneling spectroscopy. Preparation techniques include mechanical lapping, hydroplane bromine-methanol polishing, and in vacuo annealing. The morphology, electrical homogeneity, and local density of states (LDOS) have been studied for each preparation method. Impurities and oxides quickly form on the surface after each preparation method. Annealing in ultrahigh vacuum causes the surface electronic structure to become inhomogeneous whilst the LDOS suggests a compositional change from an oxide surface to p-type CZT.
引用
收藏
页码:1528 / 1532
页数:4
相关论文
共 50 条
  • [1] Stability of the photoresponse of Cd1−xZnxTe crystals
    V. K. Komar
    V. P. Mygal
    S. V. Sulima
    A. S. Phomin
    Semiconductors, 2006, 40 : 128 - 130
  • [2] Thermodynamic evaluation and potentiometric study of Cd1−xMnxTe and Cd1−xZnxTe dissolution in acid and alkaline solutions
    S. G. Dremlyuzhenko
    A. G. Voloshchuk
    Z. I. Zakharuk
    I. N. Yurijchuk
    Inorganic Materials, 2008, 44 : 21 - 29
  • [3] Specific features of conductivity of Cd1−xZnxTe and Cd1−xMnxTe single crystals
    L. A. Kosyachenko
    A. V. Markov
    E. L. Maslyanchuk
    I. M. Rarenko
    V. M. Sklyarchuk
    Semiconductors, 2003, 37 : 1373 - 1379
  • [4] Experimental study of non-stoichiometry in Cd1−xZnxTe1±δ
    J. H. Greenberg
    V. N. Guskov
    M. Fiederle
    K. -W. Benz
    Journal of Electronic Materials, 2004, 33 : 719 - 723
  • [5] Point defects in Cd1−xZnxTe: A correlated photoluminescence and EPR study
    C. I. Rablau
    S. D. Setzler
    L. E. Halliburton
    N. C. Giles
    F. P. Doty
    Journal of Electronic Materials, 1998, 27 : 813 - 819
  • [6] Cathodoluminescence spectra of Cd1−xZnxTe solid solutions
    N. K. Morozova
    I. A. Karetnikov
    V. V. Blinov
    V. K. Komar’
    V. G. Galstyan
    D. P. Nalivaiko
    Journal of Applied Spectroscopy, 2000, 67 (1) : 127 - 133
  • [7] DC photoconductivity study of semi-insulating Cd1−xZnxTe crystals
    Y. Cui
    G. W. Wright
    X. Ma
    K. Chattopadhyay
    R. B. James
    A. Burger
    Journal of Electronic Materials, 2001, 30 : 774 - 778
  • [8] Effect of compositional disorder on the optical properties of Cd1−xZnxTe
    K. Suzuki
    S. Seto
    K. Imai
    T. Sawada
    U. Neukirch
    J. Gutowski
    Journal of Electronic Materials, 1999, 28 : 785 - 788
  • [9] Comparison of Electrophysical Characteristics of Undoped Cd1 - xZnxTe, Cd1 - yMnyTe and Cd1 - x - yZnxMnyTe (x, y <= 0,1) Crystals
    Fochuk, P.
    Nykonyuk, E.
    Zakharuk, Z.
    Dremlyuzhenko, S.
    Solodin, S.
    Kopach, O.
    Opanasyuk, A.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2016, 8 (04)
  • [10] Printed silver contacts for Cd1−xZnxTe radiation detectors
    Brovko, A.
    Amzallag, O.
    Adelberg, A.
    Ruzin, A.
    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2021, 1014