Effect of Bi Doping on the Optical Properties of CdI2

被引：0
|
作者：
I. M. Kravchuk
S. S. Novosad
A. M. Voitsekhovskaya
机构：
[1] Lviv National Polytechnical University,
[2] Franko National University,undefined
来源：
Inorganic Materials | 2005年 / 41卷
关键词：
Light Yield; Radiative Recombination; Native Defect; Emission Center; Trap Level;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of Bi impurity on the optical absorption and roentgeno-, photo-, and thermoluminescence spectra of CdI2 crystals grown by the Bridgman-Stockbarger method is studied. CdI2 activation with BiI3 produces a number of absorption bands related to electronic transitions of Bi3+. Bi produces no emission centers in CdI2. The 550- to 560-nm luminescence of CdI2 is due to the radiative recombination of self-trapped anion excitons. The observed changes in spectral distribution and the reduction in light yield upon CdI2 activation with Bi3+ are mainly due to the reabsorption of emission from native centers by activator centers. Under x-ray excitation, CdI2: Bi3+ accumulates a small light sum at shallow trap levels related to native defects.
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页码：779 / 783
页数：4
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