Transparent conductive multilayer thin films of silver (Ag)-embedded barium stannate (BaSnO3) structures have been deposited onto flexible polycarbonate substrates by magnetron sputtering at room temperature to develop an indium free transparent flexible electrode. The effect of thicknesses of Ag mid-layer and barium stannate layers on optical and electrical properties were investigated, and the mechanisms of conduction and transmittance were discussed. The highest value of figure of merit is 25.5 × 10−3 Ω−1 for the BaSnO3/Ag/BaSnO3 multilayer flexible thin films with 9 nm thick silver mid-layer and 50 nm thick barium stannate layers, while the average optical transmittance in the visible range from 380 to 780 nm is above 87%, the resistivity is 9.66 × 10−5 Ω · cm, and the sheet resistance is 9.89 Ω/sq. The change rate of resistivity is under 10% after repeated bending of the multilayer flexible thin films. These results indicate that Ag-based barium stannate multilayer flexible thin films can be used as transparent flexible electrodes in various flexible optoelectronic devices.
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Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South KoreaKorea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
Jung, Keun
Choi, Won-Kook
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Korea Inst Sci & Technol, Interface Control Res Ctr, Seoul 136791, South KoreaKorea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
Choi, Won-Kook
Chae, Keun Hwa
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Korea Inst Sci & Technol, Nano Anal Ctr, Seoul 136791, South KoreaKorea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
Chae, Keun Hwa
Song, Jong-Han
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Korea Inst Sci & Technol, Nano Anal Ctr, Seoul 136791, South KoreaKorea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
Song, Jong-Han
Yoon, Seok-Jin
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Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South KoreaKorea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
Yoon, Seok-Jin
Lee, Myung-Hyun
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Korea Inst Ceram Engn & Technol, Energy Mat Ctr, Green Ceram Div, Seoul 153801, South KoreaKorea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
Lee, Myung-Hyun
Choi, Ji-Won
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Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South KoreaKorea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
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Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R ChinaChinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
Song, Chunyan
Chen, Hong
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Chinese Acad Sci, Key Lab Opt Syst Adv Mfg Technol, Changchun 130033, Peoples R ChinaChinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
Chen, Hong
Fan, Yi
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Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R ChinaChinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
Fan, Yi
Luo, Jinsong
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Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R ChinaChinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
Luo, Jinsong
Guo, Xiaoyang
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Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R ChinaChinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
Guo, Xiaoyang
Liu, Xingyuan
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Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R ChinaChinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China