0.5 V bulk-driven ring amplifier based on master–slave technique

被引：0
|
作者：
Spyridon Vlassis
Tomasz Kulej
Fabian Khateb
George Souliotis
机构：
[1] University of Patras,Electronics Laboratory, Physics Department
[2] Technical University of Częstochowa,Department of Electrical Engineering
[3] Brno University of Technology,Department of Microelectronics
[4] Czech Technical University in Prague,Faculty of Biomedical Engineering
[5] Technological Educational Institute of Western Greece,Department of Electrical Engineering
来源：
Analog Integrated Circuits and Signal Processing | 2017年 / 90卷
关键词：
Bulk-driven CMOS; Low-voltage low-power CMOS; Ring amplifier;
D O I：
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中图分类号：
学科分类号：
摘要：
This paper presents a new non-clocked standalone bulk-driven ring amplifier based on master–slave technique that ensures stable operation under process, supply voltage and temperature variations. Unlike the conventional ring amplifier the proposed topology operates without the switched capacitor technique under extremely low supply voltage. The bulk-driven ring amplifier was designed using a triple-well 0.18 µm CMOS technology. The simulation results show a 91 dB gain with 13 μW power dissipation from a 0.5 V supply voltage and the total harmonic distortion was equal to 0.29 %.
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页码：189 / 197
页数：8
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