0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier

被引：0

作者：

Kumngern, Montree ^{[1
]}

Torteanchai, Usa ^{[2
]}

Khateb, Fabian ^{[3
]}

机构：

[1] King Mongkuts Inst Technol Ladkrabang, Fac Engn, Dept Telecommun Engn, Bangkok 10520, Thailand

[2] Civil Aviat Training Ctr, Bangkok 10900, Thailand

[3] Brno Univ Technol, Dept Microelect, Tech 10, Brno, Czech Republic

来源：

2017 24TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS) | 2017年

关键词：

transconductance amplifier; bulk-driven MOS; quasi-floating gate; low-voltage low-power circuit; TUNABLE CMOS TRANSCONDUCTOR; LOW-VOLTAGE; LOW-POWER; FILTER DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a new low-voltage low-power transconductance amplifier for low-voltage low-power signal processing applications. The proposed circuit uses bulk-driven quasi-floating gate technique to offer a 0.5 V operating power supply and high operating frequency. The performances of the proposed circuit can be conformed using PSPICE simulations. The simulation result shows that the proposed circuit provides 16.7 mu W power consumption and 10 MHz open loop gain. The proposed circuit has been used to realize Tow-Thomas biquad.

引用

页码：152 / 155

页数：4

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