Formation of MnAs and MnP layers by reactive laser sputtering

被引：0

作者：

Zvonkov B.N. ^{[1
]}

Vikhrova O.V. ^{[1
]}

Danilov Y.A. ^{[1
,2
]}

Drozdov Y.N. ^{[1
]}

Kudrin A.V. ^{[1
]}

Sapozhnikov M.V. ^{[3
]}

机构：

[1] Physicotechnical Research Institute, Lobachevsky State University of Nizhnii Novgorod, Nizhnii Novgorod 603950, pr. Gagarina 23

[2] Research and Education Center Physics of Solid-State Nanostructures, Lobachevsky State University of Nizhnii Novgorod, Nizhnii Novgorod 603950

[3] Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod 603950

来源：

Bulletin of the Russian Academy of Sciences: Physics | 2010年 / 74卷 / 10期

关键词：

Compendex;

D O I：

10.3103/S1062873810100333

中图分类号：

学科分类号：

摘要：

We show that the technique of pulsed laser sputtering of metallic manganese in a flow of hydrides (arsine or phosphine) allows the deposition of half-metallic MnB 5 compound layers on GaAs (100) substrates. The crystal structure, magneto-optical, and galvanomagnetic properties of the layers are determined by synthesis conditions, mainly by substrate temperature. It is established that the MnAs and MnP layers are ferromagnetic at temperatures up to 300 K. © 2010 Allerton Press, Inc.

引用

页码：1434 / 1436

页数：2

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