Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing

被引：9
|
作者：
Cheng, C. H. [1 ]
Chou, K. I. [2 ]
Hsu, H. H. [2 ]
机构：
[1] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei 106, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2015年 / 15卷 / 02期
关键词：
InGaZnO; Thin Film Transistor; LaAlO3; Sub-Threshold Swing; ELECTRICAL CHARACTERISTICS; GATE; SPECTROSCOPY;
D O I：
10.1166/jnn.2015.9066
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We demonstrate a low-voltage driven, indium gallium zinc oxide thin-film transistor using high-kappa LaAlO3 gate dielectric. A low V-T of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm(2)Ns and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.
引用
收藏
页码：1486 / 1489
页数：4
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