Computational simulation of flip-chip underfill encapsulation process

被引：0
|
作者：
Gao, ZH
Xue, H
Liu, GR
Cui, CQ
机构：
[1] Natl Univ Singapore, Dept Mech & Prod Engn, Singapore 117548, Singapore
[2] Inst Microelect, Singapore, Singapore
来源：
HEAT TRANSFER SCIENCE AND TECHNOLOGY 2000 | 2000年
关键词：
underfill encapsulant; capillary force; VOF model; surface tension;
D O I：
暂无
中图分类号：
O3 [力学];
学科分类号：
08 ; 0801 ;
摘要：
The present work is focused on the study of the encapsulant underfill process between the chip material and the substrate. Two-dimensional transient underfill process is simulated using the computational fluid dynamics (CFD) code FLUENT. The volume of fluid (VOF) model is used to trace the flow leading edge. The simulation results are compared with the analytical predictions for fully developed 2-D flow and the experimental results in term of process lime with different encapsulant materials and gap distances between the chip and the substrate. Reasonable agreement has been achieved. Parameters affecting the processing time are discussed.
引用
收藏
页码：569 / 573
页数：5
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