MOSFET threshold voltage extractor circuits based on square-law behavior

被引：0
|
作者：
Thomas, F [1 ]
Holman, WT [1 ]
机构：
[1] Univ Arizona, Tucson, AZ 85721 USA
来源：
42ND MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, PROCEEDINGS, VOLS 1 AND 2 | 1999年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New threshold voltage (V-T) extractor circuits for single-well CMOS processes are presented. These circuits generate output voltages equal to the PFET and NFET threshold voltages, making them suitable for device characterization.
引用
收藏
页码：1118 / 1121
页数：4
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