Polarization of hot photoluminescence in GaAs/AlAs superlattices

被引：6

作者：

Sapega, VF ^{[1
]}

Perel, VI ^{[1
]}

Dobin, AY ^{[1
]}

Mirlin, DN ^{[1
]}

Akimov, IA ^{[1
]}

Ruf, T ^{[1
]}

Cardona, M ^{[1
]}

Eberl, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART, GERMANY

来源：

JETP LETTERS | 1996年 / 63卷 / 04期

关键词：

D O I：

10.1134/1.567019

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The polarization characteristics of hot photoluminescence in GaAs/AlAs superlattices are investigated experimentally and theoretically. It is shown that the formation of an electronic miniband in the superlattice substantially changes the polarization characteristics of the photoluminescence. As a result of the quasi-three-dimensional character of the motion of hot electrons in the superlattice, the polarization depends on the ratio of the electron kinetic energies in the plane of the superlattice and along the axis of the superlattice. (C) 1996 American Institute of Physics.

引用

页码：305 / 310

页数：6

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[1] Polarization of hot photoluminescence in GaAs/AlAs superlattices
[J]. JETP Lett, 4 (305):
[2] POLARIZATION OF PHOTOLUMINESCENCE IN QUANTUM SUPERLATTICES GAAS/ALAS
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