Intermittent-contact scanning capacitance microscope for lithographic overlay measurement

被引：17
|
作者：
Kopanski, JJ [1 ]
Mayo, S [1 ]
机构：
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 19期
关键词：
D O I：
10.1063/1.121397
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A scanning-capacitance-microscope (SCM) mode was implemented by using an atomic force microscope (AFM) operated in intermittent contact and by measuring the tip-to-sample capacitance change at the tip vibration frequency. The intermittent-contact-mode SCM was able to image and determine the overlay separation of metal lines buried under a 1-mu m-thick, planarized dielectric layer. Modeling of the intermittent-contact SCM signal across buried metal lines was consistent with the experimental results. This hybrid intermittent-contact AFM and SCM has the potential to measure the lithographic overlay between metal lines located at consecutive levels beneath dielectric layers in an integrated circuit. [S0003-6951(98)04119-9].
引用
收藏
页码：2469 / 2471
页数：3
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