CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio

被引：10
|
作者：
Mizunuma, Kotaro [1 ]
Ikeda, Shoji [1 ]
Yamamoto, Hiroyuki [1 ,2 ]
Gan, Hua Dong [1 ]
Miura, Katsuya [1 ,2 ]
Hasegawa, Haruhiro [1 ]
Hayakawa, Jun [2 ]
Ito, Kenchi [2 ]
Matsukura, Fumihiro [1 ]
Ohno, Hideo [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Hitachi Ltd, Adv Res Lab, Tokyo 1858601, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期
关键词：
FILMS; TMR;
D O I：
10.1143/JJAP.49.04DM04
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of Co20Fe60B20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co90Fe10/Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB layer, reached 43% at 1.77W/cm(2) in MTJs with a 1.8-nm-thick CoFeB layer inserted on both sides of the MgO barrier. With increasing CoFeB layer thickness, the optimal annealing temperature (T-a) realizing the maximum TMR ratio increased along with the TMR ratio. The MTJs with 3.0-nm-thick CoFeB deposited at 1.77W/cm(2) showed a TMR ratio of 91% at T-a 250 degrees C, where the perpendicular magnetic anisotropy is maintained. (C) 2010 The Japan Society of Applied Physics
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页数：4
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