MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

被引：119
|
作者：
Mizunuma, K. [1 ]
Ikeda, S. [1 ]
Park, J. H. [1 ]
Yamamoto, H. [1 ,2 ]
Gan, H. [1 ]
Miura, K. [1 ,2 ]
Hasegawa, H. [1 ]
Hayakawa, J. [2 ]
Matsukura, F. [1 ]
Ohno, H. [1 ]
机构：
[1] Tohoku Univ, Lab Nanoelect & Spintron, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Hitachi Ltd, Adv Res Lab, Kokubunji, Tokyo 1858601, Japan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 23期
关键词：
MAGNETORESISTANCE; ELECTRODES; ANISOTROPY; FILMS;
D O I：
10.1063/1.3265740
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at annealing temperature (T-a) of 200 degrees C and then decreased rapidly at T-a over 250 degrees C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture resulting from diffusion of B into Pd layers. MTJs which were in situ annealed at 350 degrees C just after depositing bottom CoFe/Pd multilayer showed TMR ratio of 78% by postannealing at T-a= 200 degrees C. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3265740]
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页数：3
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