Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

被引：9

作者：

Zhao, Yang ^{[1
]}

Wang, Hui ^{[2
]}

Wu, Chao ^{[1
]}

Li, Wancheng ^{[1
]}

Gao, Fubin ^{[1
]}

Wu, Guoguang ^{[1
]}

Zhang, Baolin ^{[1
]}

Du, Guotong ^{[1
,3
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[2] Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471003, Peoples R China

[3] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2015年 / 336卷

基金：

中国国家自然科学基金;

关键词：

ZnO; NiO; MOCVD; Electroluminescence; LIGHT-EMITTING-DIODES; NICKEL-OXIDE; FABRICATION; FILMS; PHOTOLUMINESCENCE; TEMPERATURE;

D O I：

10.1016/j.optcom.2014.09.021

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We fabricated the light-emitting diodes (LEDs) consisting of n-ZnO/p-NiO/p-Si heterostructure by using metal-organic chemical vapor deposition (MOCVD) combined with radio frequency (RF) magnetron sputtering. The devices exhibited diode-like rectifying current-voltage characteristics and had a turn-on voltage of 6.8 V. Under forward bias, a prominent broad emission peaked around 400-650 nm was observed at room temperature. The asymmetric electroluminescence (EL) spectra were consisted of two apparent bands, which located at 420 and 495 nm corresponding to the violet and green luminescence, respectively. Furthermore, the mechanism of the light emission was tentatively discussed in terms of the band diagrams of the heterojunction. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1 / 4

页数：4

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