Study of porous silicon gas sensor

被引：1

作者：

Kwok, WM ^{[1
]}

Bow, YC ^{[1
]}

Chan, WY ^{[1
]}

Poon, MC ^{[1
]}

Han, PG ^{[1
]}

Wong, H ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 1999年

关键词：

D O I：

10.1109/HKEDM.1999.836413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Porous silicon (Si) and porous poly-Si organic and humidity vapor sensors have been studied. For aluminum (Al)/porous Si/p-Si/Al Schottky diode sensor, the sensitivity compared to air at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol vapor are about 400, 500, 1000 and 4000% respectively. Sensitivity for 800-2600 ppm ethanol is 200 to 4000%. The sensor can be converted into an Al/porous Si/Al resistor sensor with sensitivity of about 500 times for a humidity change of 43-75%. Both sensors have response time of about 0.5 min and sensitivity is repeatable and stable with time. The porous Si sensor can be integrated into other VLSI Si devices to form novel microelectronic systems.

引用

页码：80 / 83

页数：4

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