Defects in CdTe and Cd1-xZnxTe

被引：66
|
作者：
Hofmann, DM
Stadler, W
Christmann, P
Meyer, BK
机构：
[1] TU München, Physik-Department, E16
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 380卷 / 1-2期
关键词：
D O I：
10.1016/S0168-9002(96)00287-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The current knowledge on extrinsic and intrinsic point defects in CdTe and Cd1-xZnxTe as obtained by electron paramagnetic resonance and related techniques is reviewed. Special attention will be paid to the properties of intrinsic defects such as vacancies (V-Cd and V-Te) and complexes formed with dopants (A centres: V-Cd-donor, and donor-V-Cd-donor complexes). In view of the high resistive material required for X- and gamma-ray detector applications such defects seem to play an important role.
引用
收藏
页码：117 / 120
页数：4
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