The electronic structures for the optical absorption of Hf-O-N thin films

被引：1
|
作者：
Kim, Sung Kwan
Kim, Yang-Soo
Jeon, Young-Ah
Choi, Jongwan
No, Kwang-Soo
机构：
[1] SAMSUNG ELECT, Yongin 446711, Gyeonggi Do, South Korea
[2] Korea Basic Sci Inst, Sunchon Branch, Sunchon 540742, Jeonnam, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
来源：
JOURNAL OF ELECTROCERAMICS | 2006年 / 17卷 / 2-4期
关键词：
hafnium oxynitride thin films; electronic structures; optical absorption;
D O I：
10.1007/s10832-006-0469-x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The local structures of Hf-O-N thin films were analyzed using an extended X-ray absorption fine structure (EXAFS) study on Hf L-III-edge and first-principles calculations. Depending on their composition and atomic configurations, Hf4O8 (CN: 7.0), Hf4O5N2 (CN: 6.25) and Hf4O2N4(CN: 5.5) were suggested as the local structures of Hf-O-N thin films. The optical band gaps of Hf-O-N thin films were compared with the calculated band gap. And to investigate the optical absorption, the effects of film compositions on the valence bands of Hf-O-N thin films were analyzed by comparing the experimental valence band with the valence band.
引用
收藏
页码：197 / 203
页数：7
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