Carrier transport and injection efficiency of InGaAsN quantum-well lasers

被引：0
|
作者：
Yeh, JY [1 ]
Mawst, LJ [1 ]
Tansu, N [1 ]
机构：
[1] Univ Wisconsin, Reed Ctr Photon, Dept Elect & Comp Engn, Madison, WI 53706 USA
来源：
2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2004年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
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页码：693 / 694
页数：2
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