Adsorption and dissociation of O2 on MoSe2 and MoTe2 monolayers: ab initio study

被引:12
|
作者
Zhu, X. F. [1 ]
Wang, L. [2 ]
Chen, L. F. [1 ]
机构
[1] Nanjing Normal Univ, Dept Phys, Nanjing 210097, Jiangsu, Peoples R China
[2] Nanjing Univ Informat Sci & Technol, Dept Phys, Nanjing 210044, Jiangsu, Peoples R China
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2014年 / 28卷 / 28期
关键词
Transition metal chalcogenide; molecular adsorption; ab initio calculations; electronic structure; TOTAL-ENERGY CALCULATIONS; SEMICONDUCTORS; NANOSHEETS;
D O I
10.1142/S0217979214501951
中图分类号
O59 [应用物理学];
学科分类号
摘要
Adsorption and dissociation of O-2 molecule on the MoSe2 and MoTe2 monolayers are studied by using density functional theory (DFT) within the generalized gradient approximation (GGA) and a supercell approach. The physisorbed O-2 molecule on MoSe2 and MoTe2 with a magnetic moment (MM) close to that for an isolated O-2 molecule has small adsorption energy and long distance from the surface. The dissociative adsorption of configuration R5(R6) is the most stable adsorption site, whereas the chemisorption of O-2 is unfavorable at all adsorption sites. The dissociative adsorption of configuration R4 induces dramatic changes of electronic structures and localized spin polarization both for monolayer MoSe2 and MoTe2. The analysis of electronic density of states (DOSs) shows that the contribution of spin polarization is mainly from the hybridization between O-p, Se(Te)-p and Mo-d orbitals.
引用
收藏
页数:11
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