Analysis of tin and tin oxide by x-ray photoelectron spectroscopy

被引：4
|
作者：
Chourasia, Anil R. [1 ]
Hillegas, Allen E. [1 ]
机构：
[1] Texas A&M Univ, Dept Phys & Astron, Commerce, TX 75429 USA
来源：
SURFACE SCIENCE SPECTRA | 2021年 / 28卷 / 01期
关键词：
Sn; SnO2; thin film; x-ray photoelectron spectroscopy;
D O I：
10.1116/6.0000528
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Thin film of tin (about 15 nm) was deposited on a silicon < 100 > substrate by the e-beam evaporation technique. The sample was oxidized in an oxygen atmosphere. Both the elemental tin and the oxidized sample were characterized in situ by the technique of x-ray photoelectron spectroscopy. Magnesium K alpha radiation (energy = 1253.6 eV) was used as the source of x-ray excitation. The data in the tin 3d, 3p, 4p, 4d, Auger MNN regions, and the oxygen is region were recorded with a pass energy of 35.75 eV. The oxidized tin was found to form the SnO2 phase. The data will serve as a comparison for the study in this field.
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页数：15
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