Analysis of tin and tin oxide by x-ray photoelectron spectroscopy

Thin film of tin (about 15 nm) was deposited on a silicon < 100 > substrate by the e-beam evaporation technique. The sample was oxidized in an oxygen atmosphere. Both the elemental tin and the oxidized sample were characterized in situ by the technique of x-ray photoelectron spectroscopy. Magnesium K alpha radiation (energy = 1253.6 eV) was used as the source of x-ray excitation. The data in the tin 3d, 3p, 4p, 4d, Auger MNN regions, and the oxygen is region were recorded with a pass energy of 35.75 eV. The oxidized tin was found to form the SnO2 phase. The data will serve as a comparison for the study in this field.