Low dark count rate and high single-photon detection efficiency avalanche photodiode in Geiger-mode operation

被引：36
|
作者：
Liu, Mingguo [1 ]
Bai, Xiaogang
Hu, Chong
Guo, Xiangyi
Campbell, Joe C.
Pan, Zhong
Tashima, Mark M.
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] JDS Uniphase Corp, Milpitas, CA 95035 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2007年 / 19卷 / 5-8期
关键词：
avalanche photodiodes (APDs); dark count rate (DCR); single-photon avalanche photodiodes; single-photon detection efficiency (SPDE);
D O I：
10.1109/LPT.2007.891939
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An In0.53Ga0.47As-InP avalanche photodiode with very low dark current (0.15 pA at 95% breakdown voltage, 200 K) has been characterized in gated mode for single-photon detection. The temperature dependence of dark current and dark count yields activation energy of similar to 0.4 eV from 240 K to 297 K. High single-photon detection efficiency (SPDE) at telecom wavelengths with very low dark count rate (DCR) (e.g., DCR = 12 kHz at SPDE = 45% at 1.31 mu m and 200 K) was achieved.
引用
收藏
页码：378 / 380
页数：3
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