Synthesis and photovoltaic effect of vertically aligned ZnO/ZnS core/shell nanowire arrays

被引：134
|
作者：
Wang, K. [1 ]
Chen, J. J. [1 ]
Zeng, Z. M. [1 ]
Tarr, J. [1 ]
Zhou, W. L. [1 ]
Zhang, Y. [2 ]
Yan, Y. F. [3 ]
Jiang, C. S. [3 ]
Pern, J. [3 ]
Mascarenhas, A. [3 ]
机构：
[1] Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
[2] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA
[3] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期
关键词：
II-VI semiconductors; nanofabrication; nanowires; photoconductivity; photoluminescence; photovoltaic effects; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; SOLAR-CELLS; OPTICAL-PROPERTIES;
D O I：
10.1063/1.3367706
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A vertically aligned ZnO/ZnS core/shell nanowire array with type II band alignment was directly synthesized on an indium-tin-oxide glass substrate and the photovoltaic effect of the nanowire array was investigated. The epitaxial relationship, wurtzite (0001) matching zinc-blende (111), was observed in the ZnO/ZnS nano-heterostructure. ZnS coating is found to quench the photoluminescence of ZnO nanowires but enhance the photocurrent with faster response in the photovoltaic device, indicating improvement in charge separation and collection in the type II core/shell nanowire.
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页数：3
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