Electrical and optical simulation of organic light-emitting devices with fluorescent dopant in the emitting layer

A complete model for the quantitative simulation of electrical and optical characteristics for organic light-emitting devices with fluorescent dopant in the host is presented. This simulation model consists of three parts: charged carrier transport model, exciton model, and emission and optical model. In the first part, we include not only charge carrier trapping but also direct carrier recombination phenomena on the fluorescent dopant. In the second part, Forster [Discuss. Faraday Soc. 27, 7 (1959)] energy transfer from the host molecule to the dopant molecule is included in exciton model. In addition, the quenching phenomena related to dopant concentration and electrode are also considered in this study. In the optical model, the thin-film optics is applied to calculate the interference effect of the device. Results for several multilayer devices with different fluorescent dopant concentrations are presented. On the basis of the experimental data of a typical doped device, we have found good agreement between the simulation results and the experimental data. (c) 2007 American Institute of Physics.