Low-Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM

被引：0

作者：

Fukami, S. ^{[1
]}

Suzuki, T. ^{[1
]}

Nagahara, K. ^{[1
]}

Ohshima, N. ^{[1
]}

Ozaki, Y. ^{[2
]}

Saito, S. ^{[1
]}

Nebashi, R. ^{[1
]}

Sakimura, N. ^{[1
]}

Honjo, H. ^{[1
]}

Mori, K. ^{[1
]}

Igarashi, C. ^{[1
]}

Miura, S. ^{[1
]}

Ishiwata, N. ^{[1
]}

Sugibayashi, T. ^{[1
]}

机构：

[1] NEC Corp Ltd, Device Platforms Res Labs, 1120 Shimokuzawa, Sagamihara, Kanagawa 2291198, Japan

[2] NEC Elect Corp, Adv Device Dev Div, Sagamihara, Kanagawa 2291198, Japan

来源：

2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this M RAM can replace conventional high-speed embedded memories.

引用

页码：230 / +

页数：2

共 50 条

[1] Scalable cell technology utilizing domain wall motion for high-speed MRAM
Numata, H.
Suzuki, T.
Ohshima, N.
Fukami, S.
Nagahara, K.
Ishiwata, N.
Kasai, N.
2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, : 232 - +
[2] MATCHING A HIGH-SPEED LOW-CURRENT METER WITH A MEASURED OBJECT
ANSO, MK
MEASUREMENT TECHNIQUES USSR, 1982, 25 (10): : 831 - 833
[3] Low-current gliding DC discharge in high-speed flows
Kornev, K. N.
Logunov, A. A.
Dvinin, S. A.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2024, 57 (47)
[4] CoB/Ni-Based Multilayer Nanowire with High-Speed Domain Wall Motion under Low Current Control
Ngo, Duc-The
Watanabe, Norihito
Awanoy, Hiroyuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (09)
[5] Direct Observation of Domain Wall Motion Induced by Low-Current Density in TbFeCo Wires
Ngo, Duc-The
Ikeda, Kotato
Awano, Hiroyuki
APPLIED PHYSICS EXPRESS, 2011, 4 (09)
[6] Current-mode analogue interface for high-speed low-current differential signalling
Rao, Pasupureddi V. S.
Mandal, Pradip
INTERNATIONAL JOURNAL OF ELECTRONICS, 2010, 97 (09) : 1007 - 1020
[7] Low-Current High-Speed Spin-Transfer Switching in a Perpendicular Magnetic Tunnel Junction for Cache Memory in Mobile Processors
Saida, Daisuke
Shimomura, Naoharu
Kitagawa, Eiji
Kamata, Chikayoshi
Yakabe, Megumi
Osawa, Yuichi
Fujita, Shinobu
Ito, Junichi
IEEE TRANSACTIONS ON MAGNETICS, 2014, 50 (11)
[8] Low-current operation of high-speed InP/InGaAs heterojunction bipolar transistors
Nakajima, H
Kurishima, KJ
Yamahata, SJ
Kobayashi, T
Matsuoka, Y
SOLID-STATE ELECTRONICS, 1996, 39 (04) : 439 - 444
[9] LOW-CURRENT HIGH-SPEED MAGNETIC MEMORY ARRAY UTILIZING EVAPORATED MATRIX WIRING
MATCOVICH, TJ
ADOMINES, AA
LUCIW, W
FLANNERY, W
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P2) : 760 - +
[10] Current induced domain wall motion in nanostripes with perpendicular magnetic anisotropy
Noh, Su Jung
Tan, Reasmey P.
Chun, Byong Sun
Kim, Young Keun
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 322 (21) : 3601 - 3604

← 1 2 3 4 5 →