On the CMP material removal at the molecular scale

被引：14
|
作者：
Chang, L. [1 ]
机构：
[1] Penn State Univ, Dept Mech & Nucl Engn, University Pk, PA 16802 USA
来源：
JOURNAL OF TRIBOLOGY-TRANSACTIONS OF THE ASME | 2007年 / 129卷 / 02期
关键词：
D O I：
10.1115/1.2647829
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
Understanding of the mechanisms of material removal is of fundamental importance in chemical-mechanical planarization of semiconductor wafers. A plausible mechanism at work is that the material is removed at the molecular scale by debonding the chemistry-weakened molecules at the wafer surface. A sequence of order-of-magnitude calculations is carried out to substantiate this mechanism of chemical-mechanical polishing (CMP) materials removal. The analysis may lend further credence to the mechanism in addition to its underlying theoretical foundation.
引用
收藏
页码：436 / 437
页数：2
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