Temperature dependence of piezoresistance of composite Fermions with a valley degree of freedom

被引：2

作者：

Gokmen, T. ^{[1
]}

Padmanabhan, Medini ^{[1
]}

Shayegan, M. ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 27-28期

基金：

美国国家科学基金会;

关键词：

Quantum wells; Fractional quantum Hall effect; Electronic transport; Strain; METAL-INSULATOR-TRANSITION; 2; DIMENSIONS; 2-DIMENSIONAL ELECTRONS; PHASE; BEHAVIOR; ALAS;

D O I：

10.1016/j.ssc.2010.04.024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report transport measurements of composite Fermions at filling factor v = 3/2 in AlAs quantum wells as a function of strain and temperature. In this system the composite Fermions possess a valley degree of freedom and show piezoresistance qualitatively very similar to electrons. The temperature dependence of the resistance (R) of composite Fermions shows a metallic behavior (dR/dT > 0) for small values of valley polarization but turns insulating (dR/dT < 0) as they are driven to full valley polarization. The results highlight the importance of discrete degrees of freedom in the transport properties of composite Fermions and the similarity between composite Fermions and electrons. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1165 / 1168

页数：4

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