GMRAM: Giant Magneto-Resistance Random-Access Memory

被引：0

作者：

Katti, RR ^{[1
]}

Kaakani, H ^{[1
]}

机构：

[1] Honeywell Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA

来源：

2000 IEEE AEROSPACE CONFERENCE PROCEEDINGS, VOL 5 | 2000年

关键词：

D O I：

暂无

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Giant Magneto-resistance Random-Access Memory (GMRAM) is a nonvolatile random access memory that uses magnetic multi-layers made of thin layers of common ferromagnetic materials to write digital data and the giant magneto-resistance (GMR) effect to read stored data. The direction of magnetization in the storage layer of the magnetic multi-layer is used to store a bit of information. The GMR material is magneto-resistive and changes resistance when the magnetization of the layers is changed by a magnetic field. The GMR effect produces a signal that distinguishes between a "1" and "0". GMRAM is a chip that integrates magnetic and semiconductor devices in an architecture. Attributes for GMRAM make it desirable as a nonvolatile memory.

引用

页码：371 / 376

页数：6

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