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- [41] Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3Chinese Physics B, 2019, 28 (04) : 379 - 384论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:张振中论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of Sciences School of Microelectronics Dalian University of Technology论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:杜国同论文数: 0 引用数: 0 h-index: 0机构: School of Microelectronics Dalian University of Technology School of Microelectronics Dalian University of Technology
- [42] Performance-enhanced NiO/β-Ga2O3 heterojunction diodes fabricated on an etched β-Ga2O3 surfaceAPPLIED SURFACE SCIENCE, 2022, 597Lu, Xing论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaXu, Tongling论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaDeng, Yuxin论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaLiao, Chao论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaLuo, Haoxun论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaPei, Yanli论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaChen, Zimin论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaLv, Yuanjie论文数: 0 引用数: 0 h-index: 0机构: Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaWang, Gang论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
- [43] Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ-Ga2O3 Due to Interfacing with β-Ga2O3 Template LayersPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (08):Lee, Junhee论文数: 0 引用数: 0 h-index: 0机构: Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USAGautam, Lakshay论文数: 0 引用数: 0 h-index: 0机构: Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USATeherani, Ferechteh H.论文数: 0 引用数: 0 h-index: 0机构: Nanovation, 8 Route Chevreuse, F-78117 Chateaufort, France Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USASandana, Eric V.论文数: 0 引用数: 0 h-index: 0机构: Nanovation, 8 Route Chevreuse, F-78117 Chateaufort, France Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USABove, Philippe论文数: 0 引用数: 0 h-index: 0机构: Nanovation, 8 Route Chevreuse, F-78117 Chateaufort, France Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USARogers, David J.论文数: 0 引用数: 0 h-index: 0机构: Nanovation, 8 Route Chevreuse, F-78117 Chateaufort, France Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA论文数: 引用数: h-index:机构:
- [44] Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3CHINESE PHYSICS B, 2019, 28 (04)Yang, Chao论文数: 0 引用数: 0 h-index: 0机构: Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R ChinaLiang, Hongwei论文数: 0 引用数: 0 h-index: 0机构: Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R ChinaZhang, Zhenzhong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R ChinaXia, Xiaochuan论文数: 0 引用数: 0 h-index: 0机构: Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R ChinaZhang, Heqiu论文数: 0 引用数: 0 h-index: 0机构: Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R ChinaShen, Rensheng论文数: 0 引用数: 0 h-index: 0机构: Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R ChinaLuo, Yingmin论文数: 0 引用数: 0 h-index: 0机构: Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R ChinaDu, Guotong论文数: 0 引用数: 0 h-index: 0机构: Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China
- [45] Performance-enhanced NiO/β-Ga2O3 heterojunction diodes fabricated on an etched β-Ga2O3 surfaceApplied Surface Science, 2022, 597Lu, Xing论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, China State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, ChinaXu, Tongling论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, China State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, ChinaDeng, Yuxin论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, China State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, ChinaLiao, Chao论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, China State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, ChinaLuo, Haoxun论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, China State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, ChinaPei, Yanli论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, China State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, ChinaChen, Zimin论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, China State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, ChinaLv, Yuanjie论文数: 0 引用数: 0 h-index: 0机构: The National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang,050051, China State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, ChinaWang, Gang论文数: 0 引用数: 0 h-index: 0机构: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, China State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou,510275, China
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- [47] Fabrication and Characterization of Ga2O3/ZnO Coaxial NanowiresJOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 58 (05) : 1295 - 1299Kim, Hyunsu论文数: 0 引用数: 0 h-index: 0机构: Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South KoreaJin, Changhyun论文数: 0 引用数: 0 h-index: 0机构: Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South KoreaBaek, Kyungjoon论文数: 0 引用数: 0 h-index: 0机构: Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South KoreaLee, Chongmu论文数: 0 引用数: 0 h-index: 0机构: Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South KoreaKim, Hyoun Woo论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea
- [48] Trace amount of niobium doped β-Ga2O3 deep ultraviolet photodetector with enhanced photo-responseOPTIK, 2021, 243Zhang, H.论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R ChinaDeng, J. X.论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R ChinaZhang, Q.论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R ChinaWang, X. L.论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R ChinaMeng, J. H.论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R ChinaXu, Z. Y.论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R ChinaLi, R. D.论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R ChinaZhang, X. X.论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R ChinaZhang, J.论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
- [49] MOCVD Growth of β-Ga2O3 on (001) Ga2O3 SubstratesCRYSTAL GROWTH & DESIGN, 2024, 24 (09) : 3737 - 3745Meng, Lingyu论文数: 0 引用数: 0 h-index: 0机构: Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USAYu, Dongsu论文数: 0 引用数: 0 h-index: 0机构: Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USAHuang, Hsien-Lien论文数: 0 引用数: 0 h-index: 0机构: Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USAChae, Chris论文数: 0 引用数: 0 h-index: 0机构: Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA论文数: 引用数: h-index:机构:Zhao, Hongping论文数: 0 引用数: 0 h-index: 0机构: Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
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