Comment on "charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers"

被引：1
|
作者：
Gold, A
Dolgopolov, VT
机构：
[1] Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse, France
[2] Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia
来源：
PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 16期
关键词：
D O I：
10.1103/PhysRevLett.85.3541
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
[No abstract available]
引用
收藏
页码：3541 / 3541
页数：1
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