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Comment on "charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers"
被引:1
|作者:
Gold, A
Dolgopolov, VT
机构:
[1] Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse, France
[2] Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia
关键词:
D O I:
10.1103/PhysRevLett.85.3541
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
[No abstract available]
引用
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页码:3541 / 3541
页数:1
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