Comment on "charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers"

被引:1
|
作者
Gold, A
Dolgopolov, VT
机构
[1] Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse, France
[2] Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia
关键词
D O I
10.1103/PhysRevLett.85.3541
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
[No abstract available]
引用
收藏
页码:3541 / 3541
页数:1
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