Pseudo-MOSFET transient behavior: experiments, model, substrate and temperature effect

被引：3

作者：

Zhang, X. ^{[1
,2
,3
]}

Liu, F. Y. ^{[1
,2
]}

Li, B. ^{[1
,2
]}

Li, B. H. ^{[1
,2
]}

Luo, J. J. ^{[1
,2
,3
]}

Han, Z. S. ^{[1
,2
,3
]}

Arsalan, M. ^{[4
]}

Wan, J. ^{[4
]}

Cristoloveanu, S. ^{[5
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China

[2] Chinese Acad Sci, Key Lab Silicon Device & Technol, Beijing, Peoples R China

[3] Chinese Acad Sci, Univ Chinese Acad Sci, Beijing, Peoples R China

[4] Fudan Univ, State Key Lab ASIC & Syst, Shanghai, Peoples R China

[5] INP Grenoble Minatec, IMEP LAHC, F-38016 Grenoble, France

来源：

2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2020年

关键词：

Pseudo-MOSFET; lifetime; Zerbst method; temperature; substrate effect; deep-depletion; SOI; CARRIER LIFETIME; SOI; EXTRACTION; GENERATION;

D O I：

10.1109/EUROSOI-ULIS49407.2020.9365558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical model is proposed to characterize the transient operation of Pseudo-MOSFET under gate pulses by considering the substrate effect. The analysis provides Zerbst-like expression of drain current with substrate biased in high frequency deep-depletion state. The model can be used for the extraction of carrier lifetime. The dependence of temperature on carrier lifetime was also modeled by including the temperature-dependent parameters (intrinsic carrier concentration and effective mobility). TCAD simulations and experiments validate our model with the temperature ranging from 300 K to 350 K.

引用

页数：4

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