Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD

被引：11
|
作者：
Moldavskaya, LD [1 ]
Shashkin, VI [1 ]
Drozdov, MN [1 ]
Drozdov, YN [1 ]
Daniltsev, VM [1 ]
Murel, AV [1 ]
Andreev, BA [1 ]
Yablonsky, AN [1 ]
Gusev, SA [1 ]
Gaponova, DM [1 ]
Khrykin, OI [1 ]
Luk'yanov, AY [1 ]
Sadova, EN [1 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
quantum dots; FIR photoconductivity;
D O I：
10.1016/S1386-9477(02)00914-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
InGaAs/GaAs quantum dots (QD) multilayer modulation-doped structures for infrared photodetector application were grown by the low-pressure metalorganic chemical vapor deposition. Normally incidence photoconductivity (PC) with a lateral electron transport was observed in samples, when the In supply during the QD formation was varied. At low temperature (near 4 K) PC peak was observed near 16 mum. With increasing temperature another PC peak appeared hear 5 mum. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：634 / 635
页数：2
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