Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?

被引：4
|
作者：
Milinovic, V.
Bibic, N.
Lieb, K. P.
Milosavljevic, M.
Schrempel, F.
机构：
[1] Univ Gottingen, Inst Phys 2, D-37077 Gottingen, Germany
[2] VINCA Inst Nucl Sci, Belgrade, Serbia
[3] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷
关键词：
ion-beam mixing; iron silicides; highly charged ions;
D O I：
10.1016/j.nimb.2007.01.063
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Charge-state equilibration of ions moving in matter occurs within femtoseconds and when penetrating nanometer depths. Ion-beam mixing in bilayers, tens of nm thick, should therefore not depend on the charge state of the projectiles. As the experimental situation for metal/silicon bilayers irradiated with noble-gas ions of different charge-states is ambiguous, we studied interface mixing of Fe/Si(1 0 0) bilayers, induced by 100 keV Ar-40, 180 keV Kr-86 and 250 keV Xe-132 ions, either singly and multiply charged (Ar8+, Kr11+, Xe17+). No significant influence of the ionic charge-state was established for Kr and Xe ions; a slightly higher mixing rate was found for Ar8+ than for Ar1+ irradiation. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：605 / 608
页数：4
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