Formation of β-C3N4 grains by sputtering

Carbon nitride films were grown on Si (100) substrates using de magnetron sputtering with rf bias. Reactive deposition was carried out using a graphite target in an argon nitrogen plasma. The films were characterised by transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Relatively large carbon nitride crystal grains have been synthesised in the films. Analysis of the electron diffraction pattern showed these crystalline phases to be hexagonal beta-C3N4, and an N/C ratio of 0.45 was achieved. Raman peaks around 1550 and 1250 cm(-1) demonstrate the existence of C = N (sp(2)) and C - N (sp(3)) bonds. Moreover, the intensity of C - N builds scents to increase with increasing nitrogen content. Atomic force microscopy measurements showed that the carbon nitride films had low surface roughness. The influence of deposition parameters on the surface roughness and morphology was investigated. (C) 2000 IoM Communications Ltd.