Energy Driven Modeling of OFF-state and Sub-Threshold Degradation in Scaled NMOS Transistors

被引：0

作者：

Varghese, D. ^{[1
]}

Nandakumar, M. ^{[1
]}

Tang, S. ^{[1
]}

Reddy, V. ^{[1
]}

Krishnan, S. ^{[1
]}

机构：

[1] Texas Instruments Inc, Analog Technol Dev, Dallas, TX 75243 USA

来源：

2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年

关键词：

OFF-state drain stress; sub-threshold degradation; gate dielectric breakdown; energy-driven hot carrier model; lateral scaling; universal degradation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study OFF-state and sub-threshold degradation in scaled NMOS transistors and propose a unified channel current (IS) and drain-to-source voltage (VDS) dependent lifetime model for a wide range of bias conditions. The lifetime dependence on VDS suggests that degradation is limited by the maximum energy available for the channel electron in short channel transistors.

引用

页数：4

共 48 条

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