Effect of abrasive grit shape on polishing of β-Ga2O3(100) substrate

被引:8
|
作者
Huang, Chuanjin [1 ]
Zhou, Hai [1 ]
Xia, Changtai [2 ]
Xu, Xiaoming [1 ]
Xu, Tongtong [1 ]
Xia, Siwei [1 ]
机构
[1] Yancheng Inst Technol, Coll Mech Engn, Yancheng 224051, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
基金
中国国家自然科学基金;
关键词
Gallium oxide; Polishing; Elastic stress field; Abrasive grit shape; MATERIAL REMOVAL; DEFORMATION MECHANISM; PARTICLE-SHAPE; BRITTLE MATERIALS; DUCTILE; STRESS; MODEL; PERFORMANCE; DAMAGE; DEPTH;
D O I
10.1016/j.precisioneng.2019.10.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
beta-Ga2O3 can be cleaved easily, where the (100) surface is the main cleavage surface. This surface encounters local stress concentration during ultra-precision machining and is prone to local fragmentation, resulting in formation of micro-cleavage pits. The effects of different abrasive grit shapes on polishing are studied in order to ensure smooth processing of beta-Ga2O3(100). First, a contact mechanics model for different shapes of abrasive grits and crystal surfaces is established in accordance with the theory of elasticity. Then, the contact mechanism between the abrasive grits and the crystal surfaces is analyzed using a theoretical model. Finally, the feasibility of the theoretical model is verified in experiments. The results show that blunt spherical abrasive grits are more suitable for polishing of beta-Ga2O3(100) than sharp diamond-shaped abrasive grits. Compared to sharp abrasive grits, the crystal surfaces processed using blunt abrasive grits are smoother, with surface roughness (Ra) of approximately 14 nm. During polishing, the sharp and blunt abrasive grits remove brittle and plastic material, respectively. Therefore, blunt abrasive grits are more suitable for the polishing of beta-Ga2O3 than sharp abrasive grits.
引用
收藏
页码:65 / 71
页数:7
相关论文
共 50 条
  • [1] Effect of abrasive on tribological behavior and polishing effect of β-Ga2O3(100) substrate
    Wang, Tao
    Yan, Qiusheng
    Xiong, Qiang
    Lin, Junqiang
    Lu, Jiabin
    Pan, Jisheng
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 172
  • [2] Effect of chemical action on the chemical mechanical polishing of β-Ga2O3(100) substrate
    Huang, Chuanjin
    Zhou, Hai
    Zhu, Yongwei
    Xia, Changtai
    PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2019, 56 : 184 - 190
  • [3] Effect of OH- on chemical mechanical polishing of β-Ga2O3(100) substrate using an alkaline slurry
    Huang, Chuanjin
    Mu, Wenxiang
    Zhou, Hai
    Zhu, Yongwei
    Xu, Xiaoming
    Jia, Zhitai
    Zheng, Lei
    Tao, Xutang
    RSC ADVANCES, 2018, 8 (12): : 6544 - 6550
  • [4] Effects of polishing disc material and substrate surface temperature on the tribological behaviors and machining results of β-Ga2O3(100)
    Wang, Tao
    Xiong, Qiang
    Yan, Qiusheng
    Peng, Shun
    Lin, Junqiang
    Lu, Jiabin
    Pan, Jisheng
    Xia, Jiangnan
    INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2024, 134 (1-2): : 765 - 780
  • [5] Effect of Substrate Thinning on Temperature Rise in Ga2O3 Rectifiers
    Chiang, Chao-Ching
    Li, Jian-Sian
    Wan, Hsiao-Hsuan
    Ren, Fan
    Pearton, Stephen J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2024, 13 (11)
  • [6] Optimization of chemical mechanical polishing of (010) β-Ga2O3
    Liao, Michael E. E.
    Huynh, Kenny
    Matto, Lezli
    Luccioni, Dorian P.
    Goorsky, Mark S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (01):
  • [7] Effect of metal contacts on (100) β-Ga2O3 Schottky barriers
    Lyle, Luke A. M.
    Jiang, Kunyao
    Favela, Elizabeth V.
    Das, Kalyan
    Popp, Andreas
    Galazka, Zbigniew
    Wagner, Guenter
    Porter, Lisa M.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (03):
  • [8] β-Ga2O3 nanorods crossing perpendicularly each other on MgO (100) substrate
    Shigemi Kohiki
    Kimihiro Yasui
    Kyoko Hori
    Masahiro Fukuta
    Wataru Yamauchi
    Hirokazu Shimooka
    Toetsu Shishido
    Masaoki Oku
    Masanori Mitome
    Yoshio Bando
    Journal of Materials Science, 2005, 40 : 4145 - 4147
  • [9] Evaluation of diode characteristics for fully vertical β-Ga2O3 on silicon (100) substrate
    Manoj K. Yadav
    Satinder K. Sharma
    Ankush Bag
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 13845 - 13856
  • [10] Evaluation of diode characteristics for fully vertical β-Ga2O3 on silicon (100) substrate
    Yadav, Manoj K.
    Sharma, Satinder K.
    Bag, Ankush
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (16) : 13845 - 13856