Correlation of spatially resolved lifetime measurements with overall solar cell parameters

被引：5

作者：

Isenberg, J ^{[1
]}

Dicker, J ^{[1
]}

Riepe, S ^{[1
]}

Ballif, C ^{[1
]}

Peters, S ^{[1
]}

Lautenschlager, H ^{[1
]}

Schindler, R ^{[1
]}

Warta, W ^{[1
]}

机构：

[1] Fraunhofer ISE, D-79110 Freiburg, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190490

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Lifetime mappings are common tools for assessing the quality of mc-silicon for solar cell production. Nevertheless it is a difficult problem to directly relate lifetime mappings to overall solar cell parameters. This paper intends to show that this correlation is possible quantitatively. We have correlated actual low-level injection lifetimes obtained by Carrier Density Imaging (CDI) measurements with overall cell parameters of solar cells processed on adjacent wafers. The 2D lifetime-structure is taken account for by appropriate weighing functions that include the whole information given in the frequency distribution. of bulk lifetimes. Thus a one dimensional cell model (PC1D) can be applied. Good general agreement between predicted and measured cell parameters has been achieved, deviations are discussed. Further insight into the gettering behavior of block-cast and Bridgman-grown mc-silicon was attained.

引用

页码：198 / 201

页数：4

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