High resolution transport spectroscopy in ultimate MOSFETs at very low temperature

被引：0
|
作者：
Sanquer, M
Jehl, X
Specht, M
Bertrand, G
Guégan, G
Deleonibus, S
机构：
[1] CEA, SPSMS, DRFMC, DSM, F-38054 Grenoble 9, France
[2] CEA, LETI, F-38054 Grenoble 9, France
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 12期
关键词：
D O I：
10.1016/j.sse.2004.04.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To analyse electrostatic disorder in doped sub-100 nm Si-MOSFET channels we investigate the sub-threshold regime by transport spectroscopy at very low temperature. We measure resonances in the differential drain current and analyse their distribution in gate voltage, which is found to be gaussian. The mean value is interpreted as the electrostatic charging energy associated to a local well in the surface potential, whose dimensions is comparable to the channel length. The channel dopants concentration does not affect significantly this result. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2213 / 2217
页数：5
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